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Datasheet File OCR Text:

PD-96963
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level IRHF597130 100K Rads (Si) IRHF593130 300K Rads (Si) RDS(on) ID 0.24 -6.7A 0.24 -6.7A
IRHF597130 100V, P-CHANNEL
5
TECHNOLOGY
TO-39
International Rectifier's R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC=25C ID @ VGS = -12V, TC=100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -6.7 -4.3 -26.8 25 0.2 20 240 -6.7 2.5 -17 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (0.063 in./1.6 mm from case for 10s) 0.98 (Typical )
g
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1
09/26/05
IRHF597130
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage
Min
-100
Typ Max Units
-- -0.13 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 7.0 -- -- 0.24 -4.0 -- -10 -25 -100 100 40 16 11 25 50 45 125 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -4.3A A VDS = VGS, ID = -1.0mA VDS = -15V, IDS = -4.3A A VDS = -80V ,VGS = 0V VDS = -80V, VGS = 0V, TJ =125C VGS = -20V VGS = 20V VGS =-12V, ID = -6.7A VDS = -50V VDD = -50V, ID = -6.7A VGS =-12V, RG = 7.5
BV DSS /T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance VGS(th) Gate Threshold Voltage -2.0 g fs Forward Transconductance 4.3 IDSS Zero Gate Voltage Drain Current -- -- IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- --
nA nC
ns
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad
Ciss Coss Crss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance
-- -- -- --
1250 318 28 8.0
-- -- -- --
pF
VGS = 0V, VDS = -25V f = 1.0MHz f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -6.7 -26.8 -5.0 150 408
Test Conditions
A
V ns nC T j = 25C, IS = -6.7A, VGS = 0V A Tj = 25C, IF = -6.7A, di/dt -100A/s VDD -50V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 5.0 175
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHF597130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source A On-State Resistance(TO-39) Diode Forward Voltage A 100K Rads(Si)1 Min Max -100 -2.0 -- -- -- -- -- -- -- -4.0 -100 100 -10 0.205 0.24 -5.0 300KRads(Si)2 Min Max -100 -2.0 -- -- -- -- -- -- -- -4.0 -100 100 -10 0.205 0.24 -5.0 Units V nA A V
Test Conditions
VGS = 0V, ID = -1.0mA V GS = VDS, ID = -1.0mA VGS =-20V VGS = 20 V VDS = -80V, VGS =0V VGS = -12V, ID = -4.3A VGS = -12V, ID = -4.3A VGS = 0V, IS = -6.7A
1. Part number IRHF597130 2. Part number IRHF593130
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I Au LET (MeV/(mg/cm2)) 37.9 59.7 82.3 Energy (MeV) 252.6 314 350 VDS (V) Range (m) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V @VGS=20V 33.1 -100 -100 -100 -100 -100 -100 30.5 -100 -100 -100 -100 -75 -25 28.4 -100 -100 -100 -30 -- --
-120 -100 -80 VDS -60 -40 -20 0 0 5 10 VGS 15 20 25 Br I Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHF597130
Pre-Irradiation
100
-I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A)
VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
100
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
10
10
-5.0V
-5.0V
1
1
60s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V)
60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -6.7A
2.0
-I D, Drain-to-Source Current (A)
T J = 25C T J = 150C 10
1.5
1.0
VDS = -25V 15 60s PULSE WIDTH 1 5 6 7 8 9 10 -VGS, Gate-to-Source Voltage (V)
VGS = -12V
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHF597130
2000
-VGS, Gate-to-Source Voltage (V)
1600
VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
20 ID = -6.7A 16 VDS= -80V VDS= -50V VDS= -20V
C, Capacitance (pF)
1200
Ciss
12
800
Coss
8
400
4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 5 10 15 20 25 30 35 40
0 1
Crss
10 100
-VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
-I SD , Reverse Drain Current (A)
10
TJ = 150C
-ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
10
100s 1ms
T J = 25C 1
1 Tc = 25C Tj = 150C Single Pulse 1 10
10ms
VGS = 0V 0.1 0 1 2 3 4 5 6 7 -V SD , Source-to-Drain Voltage (V)
0.1
100
1000
-V DS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRHF597130
Pre-Irradiation
7 6
-I D, Drain Current (A)
V GS RG V GS
V DS
RD
D.U.T.
+
4 3 2 1 0 25 50 75 100 125 150
90%
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
VGS 10%
T C , Case Temperature (C)
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10
1
0.01 0.00001
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
V DD
Pre-Irradiation
IRHF597130
VDS
L
600
EAS , Single Pulse Avalanche Energy (mJ)
RG
D.U.T
IAS
+
DRIVER
V DD VDD
A
500
VGS -20V
tp
0.01
ID -3.0A -4.2A BOTTOM -6.7A TOP
400
300
15V
200
Fig 12a. Unclamped Inductive Test Circuit
I AS
100
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
D.U.T.
-
-12 V
-12V 12V
.2F .3F
QGS
QGD
VDS
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IRHF597130
Pre-Irradiation
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = -25V, starting TJ = 25C, L =10.6mH Peak IL = -6.7A, VGS = -12V A ISD -6.7A, di/dt -530A/s, VDD -100V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-205AF(Modified TO-39)
LEGEND 1- SOURCE 2- GATE 3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 09/05
8
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